Mechanism of wavelength switching controlled by injection current in an asymmetric dual quantum well laser

Based on the coupled rate equations in laser device with an asymmetric dual quantum well structure, the wavelength switching mechanism is explained. It is found that the finite carrier lifetime and the overlap of wavefunctions play important roles in the wavelength switching. Some experimental results from S. Ikeda et al. (1989) are discussed. A novel type of device with wavelength switching controlled hole injection is suggested. Because of the much longer lifetime of heavy holes compared with that of electrons, a better device efficiency and larger wavelength difference can be achieved in this device.<
>