A 2.5 dB low noise 6 to 18 GHz HEMT MMIC amplifier

A two-stage, 6-18-GHz, 15.0-dB-gain monolithic GaAs high-electron-mobility-transistor (HEMT) low-noise amplifier (LNA) was designed, fabricated, and tested. A typical noise figure of 2.5 dB and output power of 5 dBm were measured. This MMIC amplifier exhibited excellent performance at a DC power consumption of 2 V and 20 mA. This performance was achieved using a production 0.25- mu m standard HEMT technology without mushroom gates. Low DC power consumption, a low noise figure, and high gain make this device well suited for front-end receiver applications.<
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