Inverse modeling for doping profile extraction in the presence of interface traps

The inverse modeling method for doping profile extraction has been extended to take into account interface trap effects. It is shown that by using both capacitance and conductance measurement data of a MOS capacitor, the doping profile in the surface region can be calculated accurately even if the interface trap density is high. The extraction technique was supported by extensive numerical simulations and experimental results obtained using various nonuniformly doped MOS capacitors.<>