An a-Si:H photoconductive sensor with a gate electrode

A hydrogenated amorphous silicon photoconductive sensor with a gate electrode is developed for a matrix-driven linear image sensor array. The photoresponse time for this new sensor is about 1/3 of that for a conventional photoconductive sensor. A new dynamic model is proposed to analyze the photoresponse characteristics for this sensor. The minimum photoresponse time predicted by the calculation is about 2 ms. This value is markedly short compared with that for a conventional photoconductive sensor (about 5 ms).<
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