Numerical experiment for 2500 V double gate bipolar-mode MOSFETs (DGIGBT) and analysis for large safe operating area (SOA)

A double-gate bipolar-mode MOSFET (DGIGBT) is proposed as a high-speed switching device exceeding 2500 V. The DGIGBT inherently has a reverse conducting diode. It is numerically predicted that the device will attain a better tradeoff between turn-off time and forward voltage than an 1800-V single-gate device. It is experimentally confirmed that DGIGBTs have an SOA exceeding the theoretical power dissipation limit for an n-p-n transistor, and it is shown why the SOA can exceed this limit.<
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