A 6-21-GHz monolithic HEMT 2*3 matrix distributed amplifier

The results of the first monolithic matrix distributed amplifier fabricated using pseudomorphic high-electron-mobility transistor (HEMT) technology are reported. The HEMT matrix amplifier obtains a combination of high gain, wide bandwidth, and reasonable IP3 and noise figure. The best gain response is 20 dB from 6 to 21 GHz. The noise figure is 5.5 dB and the third-order intercept point is 21 dBm. In comparison to GaAs HBT and MESFET technologies, the HEMT matrix distributed amplifier shows the best promise for wideband millimeter-wave applications.<
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