Comparison of measured and computed conversion loss from a resonant tunneling device multiplier

The behavior of a resonant tunneling device (RTD) as a multiplier over a range of bias voltage is investigated. The experimental results agree well with large-signal simulations based on a simple equivalent circuit with element values derived from the I-V characteristic and low-frequency small-signal impedance measurements. This technique can be extended to assist in the design and realization of millimeter and submillimeter RTD multipliers.<
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