U-band 200 mW pseudomorphic InGaAs power HEMT

A U-band pseudomorphic InGaAs power HEMT (high electron mobility transistor) has been developed. The device has two 400 mu m gate-width unit cells connected in parallel with monolithically integrated Wilkinson-type microstrip power divider and combiner. A state-of-the-art output power of 23.4 dBm (219 mW) is obtained at 55 GHz with 4.1 dB gain and 18% power-added-efficiency.<
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