Reduced Recovery Time Semiconductor Optical Amplifier Using p-Type-Doped Multiple Quantum Wells

The effect of p-type doping of the active region of multiple quantum-well (MQW) semiconductor optical amplifiers (SOAs) has been studied. Spectrogram measurements of the dynamics of the SOAs reveal that using p-doped barriers for the MQWs has significantly reduced both gain and phase recovery times. 1/e phase recovery times as short as 11 ps were demonstrated using this approach