Phosphorus Segregation Control for SiGe:C Epitaxy

P segregation behavior in SiGe:C layer of different Ge content and different growth temperature was investigated. For each Ge content, steepness of P spike became lower with increasing growth temperature. In comparison at the same growth temperature, steepness of P spikes in SiGe:C with 20% Ge content is lower than that with 10% Ge content. The difference becomes higher at higher growth temperature. A two-step steepness profile was observed in 30% SiGe:C layer, and the possible reason of this behavior may be related to relaxation of the SiGe:C layer.