Growth Kinetics of Si and SiGe on Si

We propose in this paper a detailed study of the growth kinetics of Si and SiGe in reduced pressure chemical vapor deposition on Si(100), Si(110) and Si(111) substrates. The gaseous chemistry used, dichlorosilane (SiH
₂
Cl
₂
) + germane (GeH
₄
) + hydrochloric acid (HCl), is selective versus SiO
₂
and Si
₃
N
₄
. One should thus greatly benefit from such data when growing selectively either recessed SiGe sources and drains or Si raised sources and drains in the active regions of (110) pMOSFETs, when depositing SiGe in the (111) grooves of V-MOSFETs, when growing Si or SiGe on the (110) sidewalls of FinFETs etc