Analysis of Electron Mobility in Relaxed and Strained Si1-xCx Alloys

We have presented the theoretical model for electron mobility in strained Si
_1-x
C
_x
alloys. Theoretical calculations predict that electron transport is enhanced in undoped strained Si
_1-x
C
_x
, alloys with lower alloy scattering potential. The results show that the calculated mobilities from our model matches with the experimental results well