High temperature growth of very high Ge content SiGe virtual substrates

Very high Ge content SiGe virtual substrates (50% les [Ge] les 70%) can serve as templates for the growth of compressively strained Ge (c-Ge) / t-Si dual channels, with impressive hole mobility enhancements (up to 10) over bulk Si based in M. L. Lee and E. A. Fitzgerald (2003) and O. Weber et al. (2005). SiGe virtual substrates graded all the way up to pure Ge according to M. T. Currie et al. (1998) enable the monolithic integration of high performance III-V optical devices (such as p
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/ n GaAs solar cells as presented in C. L. Andre et al. (2005), AlGaInP resonant cavity light emitting diodes, etc. as presented in O. Kwon et al. (2005)) on large area Si substrates etc. In this paper, we quantify the evolution of the structural properties of SiGe virtual substrates grown at 850degC in a commercial reduced pressure-chemical vapor deposition tool as a function of the final Ge concentration in the 50% to 100% range