A new, universal and fast switching gate-drive-concept for SiC-JFETs based on current source principle

The paper proposes a new and universal gate drive concept for SiC JFETs taking into account the special demands of these normally-on devices. Particularly with regard to voltage source inverter or matrix converter topologies there is the static need of keeping the JFET device safe in the off-state during a passive switch event of the anti-parallel diode. The dynamic need is the ability to turn off very fast while charging all participating parasitic capacitances. The proposed gate drive circuit ensures safe operation of the gate-source-pn-junction especially with respect to its different pinch-off and break-through voltages of the JFET samples. Beside that, over-current and under-voltage protection are implemented, too.