Performance comparison of circuit simulator lumped models for the body diode reverse recovery of low voltage power trench MOSFETs

Circuit simulator diode lumped models are investigated for representing the reverse recovery of low voltage power trench MOSFETs. Three previously presented models are compared in terms of internal constitution, circuit implementation, prediction accuracy and required computation power. 2D finite element simulations of a trench MOSFET cell underlie the prediction accuracy study. The purpose of this work is to obtain an equivalent accurate lumped model of the virtual device to appropriately analyse its performance in the circuit application before it is manufactured. Results show how effectively the lumped models can predict reverse recovery transients under different load current and switching speed conditions in a synchronous rectifier application.