Unique Ultra Shallow Junction Scheme with Conventional Activation Process

A unique ultra shallow junction scheme featured with integrating diffusion barrier into eSiGe:B strained pMOSFETs has been demonstrated. Embedded diffusion barrier (EDB) drastically suppresses boron out-diffusion from subsequent thermal treatment, thus resulting in superior short channel control. This approach enables the formation of ultra shallow junction, over 30% junction depth reduction, while simultaneously maintaining low extension resistance using conventional activation process only. Furthermore, eSiGe:B with embedded diffusion barrier (eSiGe:B w/ EDB) scheme can still retain local stress and enhanced pMOSFETs current. Device performance and barrier layer characteristics of eSiGe:B w/ EDB scheme are also reported in this work