18.3 Superior Current Enhancement in SiGe Channel p-MOSFETs Fabricated on [110] Surface

The promising potential of (110) SiGe channel as next generation high performance p-MOSFETs is well demonstrated in this work. As high as 48% of drive current enhancement on SiGe channel p-MOSFETs fabricated on (110) surface have been achieved for the first time. In addition, combining with compressive stress capping layer, the (110) SiGe channel p-MOSFETs exhibits an extended 81% Idsat gain with Idsat of 850μA/μm at 100nA/μm Ioff. The 32% larger longitudinal piezoresistance coefficient compared to Si extracted from SiGe channel p-MOSFET reveals the advantage of applying strain in SiGe channel. The 3.3 X hole mobility enhancement of (110) SiGe over (100) Si illustrates the advantage of this device architecture