TiN/HfSiOx Gate Stack Multi-Channel Field Effect Transistor (McFET) for Sub 55nm SRAM Application

For the first time, titanium-nitride (TiN) single metal gate and high-k hafnium-silicate (HfSiO
_x
) gate dielectric have been successfully integrated in 55nm McFET SRAM cell. The use of HfSiO
_x
gate dielectric, not only reduces gate leakage current but also improves I
_ON
/I
_OFF
ratio of PFET to 10
⁸
. Using local fin implantation (LFI) scheme, junction capacitance is reduced by 13% and junction breakdown voltage is increased by 1.4V