Very Low Voltage SiO2/HfON/HfAlO/TaN Memory with Fast Speed and Good Retention

At 85degC under very low plusmn 8V and fast 100mus P/E, good memory device integrity of 2.5V initial DeltaV
_th
and 1.45 V 10-year extrapolated retention are obtained. This was achieved in SiO
₂
/HfON/HfAlO/TaN MONOS using very high-kappa (~22) and deep trapping HfON, which further gives good 1.0V 10-year memory window even at 125°C