Vertex Channel Field Effect Transistor (VC-FET) Technology Featuring High Performance and Highly Manufacturable Trench Capacitor DRAM

Vertex channel (VC) transistor is applied to both support devices and array transistor of trench capacitor DRAM for the first time. On-current of VC-FETs is much higher than that of conventional planar devices with keeping sufficiently small off-current. They achieve 15% or much smaller propagation delay (Tpd) of fan-out 3 than planar devices. Furthermore, 1.6 times of on-current as a planar array transistor is achieved by the combination of VCAT and P+poly gate without degradation of retention characteristics