Extraction of carrier transport and electronic parameters of submicrometer gate-length MODFET's on InP and GaAs substrates

The transport and electronic parameters of 0.25- mu m and 0.15- mu m-gate-length MODFETs based on InP and GaAs material systems extracted through a systematic measurement technique are discussed. The maximum intrinsic sheet carrier concentrations, n/sub 2DEG/, for 0.25- mu m and 0.15- mu m gate-length InP-based lattice-matched (In/sub 0.52/Al/sub 0.48/As/In/sub 0.53+x/Ga/sub 0.47-x/As/ In/sub 0.52/Al/sub 0.48/As, with x=0) and strained channel (x=0.16) MODFETs are experimentally determined to be 0.55, 0.30, and 0.50*10/sup 12/ cm/sup -2/, respectively, whereas the values of the same parameter in GaAs-based pseudomorphic MODFETs are found to be 1.20 and 0.57*10/sup 12/ cm/sup -2/, for 0.25- mu m and 0.15- mu m gate-length devices, respectively. The extracted effective carrier average velocities for the former three devices are 4.0, 6.9, and 8.2*10/sup 7/ cm/s, and those for the latter two devices are 2.9 and 5.7*10/sup 7/ cm/s, respectively.<
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