Simulation of small semiconductor devices using a coupled Monte Carlo-Poisson approach

A numerical model for electronic transport in semiconductor devices is summarized and a recently published model-based comparison of idealized submicron MOSFETs which are nominally the same except for differing substrate material is reviewed. Five substrate materials-Ge, Si, GaAs, InP, and In/sub 0.53/Ga/sub 0.47/As are considered, and the logic switching performance of the devices is compared. These simulations were performed with the program DAMOCLES (device analysis using Monte Carlo et Poisson solver), implementing a solid physical basis within a flexible device modeling framework. In addition, an analysis utilizing a GaAs SISFET is performed.<
>