AlGaAs/GaAs HBT for linear and saturated power application

The excellent performance of heterojunction bipolar transistors (HBTs) in both linear and saturated power applications is demonstrated theoretically. Excellent uniformity in transistor parameters and breakdown voltage is also found. Optical lithography on 2- mu m minimum feature size makes the throughput and the yield high. A high-efficiency 0.7-W common base power HBT for X-Ku band application is reported.<
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