Efficiency improvement in a-Si and a-SiGe solar cells using a super chamber method

A total area conversion efficiency of 11.1% was achieved for a 10*10 cm/sup 2/ integrated-type a-Si solar cell submodule. Approaches to improving conversion efficiency included the development of new materials, new fabrication methods, and a new device structure, specifically, the super chamber method, trimethylboron (B(CH/sub 3/)/sub 3/) p a-SiC:H, highly-textured TCO, an ultra-thin interface layer, and low-damage laser patterning process. New approaches to preparing a-Si:H and a-SiGe:H films are proposed. High-quality, wide-bandgap a-Si:H films have been fabricated at low substrate temperature by diluting silane with hydrogen. High-quality a-SiGe:H were fabricated using the super chamber method.<
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