The design and evaluation of dual-junction GaInP/sub 2//GaAs solar cells for space applications

The necessary design considerations for a space-qualified GaInP/sub 2//GaAs cell are addressed. Analyses are presented which indicate that, with the proper active layer thicknesses and doping levels, BOL efficiencies of 27% (AM0, 28 C) can be achieved from a cell with 84% remaining power at EOL ( 1*10/sup 15 /e/cm/sup 2/). Experimental data from 1 MeV electron irradiation of terrestrial GaInP/sub 2//GaAs tandem cells which are in support of these predictions are presented. The results indicate that the thin GaInP/sub 2/ top cell degrades less than 10% and that the GaAs behaves as predicted.<
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