A fully-integrated 60 GHz VCO in l3Onm SOI-CMOS on high-resistivity substrate

The design and the optimization of a new VCO operating at 60GHz is detailed. This key block in millimeterwave transceivers takes advantage of a promising CMOS PDSOI technology on a high-resistivity substrate (p>1000ω.cm). As a result, an innovative architecture has been chosen to overcome difficulties encountered in the classical LC tank structure. One of the major issues in microwave networks is the interconnections. CPW has been chosen and thoroughly optimized: model parameters are extracted from a quasi-3D electro-magnetic simulator. Simulation results and conclusions drawn here are to be verified with upcoming chip measurement.