On the reverse blocking characteristics of Schottky power diodes

An analytical model for the reverse blocking characteristics of Schottky power diodes has been obtained by incorporating the impact ionization multiplication factor into the thermionic-emission reverse leakage current with field-dependent Schottky-barrier lowering. Excellent agreement has been found between calculated curves and measured data. This model allows the accurate calculation of the reverse-leakage current of Schottky diodes at high reverse voltage.<
>