InAs self-assembled quantum dot and quantum dash lasers on InP for 1.55 μm optical telecommunications

1.3 μm quantum dot (QD) lasers grown on GaAs substrates have recently shown promising performances. For the 1.55 μm wavelength range, QD structures grown on InP substrates have been proposed to produce lasers for long haul telecom. At this wavelength, the progress has been delayed by the difficulties to obtain high density of small QDs by molecular beam epitaxy. On