RF Split Capacitance–Voltage Measurements of Short-Channel and Leaky MOSFET Devices

In this letter, the feasibility of split-capacitance–voltage (
$C$
–
$V$
) measurements in the RF range is demonstrated. These RF/split-
$C$
–
$V$
measurements show excellent agreement with the values obtained by the low-frequency conventional technique but without presenting any noticeable degradation due to gate leakage.