Impact of GaInP growth by MOVPE on laser performance

Ga/sub 0.51/In/sub 0.49/P has been studied for use as an alternative to AlGaAs as a laser cladding material. The performance of 980 nm GaInP/GaAs/GaInAs strained layer pump lasers has been found to be highly dependent on the growth parameters of the GaInP layers. Ordering in the Ga/In sublattice appears to be an important factor in determining the usefulness of MOVPE grown GaInP, and the laser results can be correlated with TEM studies of ordering. If the growth conditions are optimised on the basis of these results then laser thresholds are similar to the best achieved with AlGaAs clad 980 nm lasers.<
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