Fabrication and Performance of GaAs Double Camel-Like Gate FET with Extremely High Gate Turn-on Voltage

Extremely high potential barrier height and gate turn-on voltage of a novel GaAs field-effect transistor with n
⁺
/p
⁺
/n
⁺
/p
⁺
/n double camel-like gate structure are demonstrated. The maximum electric field and potential barrier height of the double camel-like gate are substantially enhanced by the addition of another n
⁺
/p
⁺
layers in gate region, as compared with the conventional n
⁺
/p
⁺
/n single camel-like gate. For a 1 × 100 μm
²
device, a potential barrier height up to 2.741 V is obtained. Experimentally, a high gate turn-on voltage up to + 4.9 V is achieved because two reverse-biased junctions of the double camel-like gate absorb part of positive gate voltage. In addition, the transistor action shows a maximum saturation current of 730 mA/mm and an extrinsic transconductance of 166 mS/mm.