Self-organized (111) faceted NiSi2 source and drain for advanced SOI MOSFETs

Self-organized (111) faceted NiSi
₂
source and drain structure with segregated dopants in the NiSi
₂
/Si interfaces has been proposed for aggressively scaled SOI MOSFETs. The advantages of this source and drain structure are a superior short-channel effect (SCE) immunity and a very small parasitic resistance. The SCE is suppressed by a trapezoidal shape of the channel and by a small variation in the channel length that is obtained thanks to the epitaxial growth of NiSi
₂
on Si. The significant effects of the channel shape and the variation-free channel length are also confirmed by the numerical simulation. Owing to the low-temperature annealing at 600degC for NiSi
₂
formation and dopants activation, wider selections of gate metal and high-k gate dielectric are possible. Moreover, NiSi
₂
is the most Si-rich phase among nickel silicides family and thermally stable. Self-organized (111) faceted NiSi
₂
source/drain structure is thus quite promising for future CMOS devices