Direct Observation of 2-D Dopant Profiles of MOSFETs Activated by Millisecond Anneal

We have directly measured two-dimensional (2-D) dopant profiles of millisecond-annealed p-MOSFETs by scanning spreading resistance microscopy (SSRM) for the first time. The measured 2-D dopant profiles agree with simulated dopant profiles obtained by using calibrated TCAD tools. Three-dimensional (3-D) SSRM simulation reveals that the current SSRM probe-contact radius has enough spatial resolution. For further scaling, however, smaller radius of probe is required.