InGaAsP-InP dual-wavelength bipolar cascade lasers

We report the demonstration of an InGaAsP-InP-based dual-wavelength bipolar cascade laser. Simultaneous dual-wavelength (1350 and 1450 nm) output at room temperature using pulsed excitation is achieved by epitaxially connecting two different active regions with a low area specific resistance (/spl sim/10/sup -4/ /spl Omega/cm/sup 2/) InAlAs-InP hetero-tunnel-junction. By connecting more active regions together, ultrabroadband gain materials may be obtained.