"2nd Generation" SiC Schottky diodes: A new benchmark in SiC device ruggedness

A new commercially available SiC Diode is reported and key features like widely improved surge current capability and avalanche ruggedness are described and related to the merged pn/Schottky device structure. The clearly positive temperature coefficient of the avalanche allows high avalanche power dissipation in the range of 20W/mm
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even in the frame of long term (1000h) testing. Additionally the device has the same excellent dynamic properties as already known from pure SiC Schottky diodes. The dV/dt ruggedness of the device was also proven with a long term test (3.6E11 cycles with > 90V/ns). No noticeable difference in switching losses occur when the device is switched off from nominal current at room temperature or from 10x nominal current at 150°C. The long term stability of the device under bipolar operation at high current densities (> 2kA/cm
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) at the p-areas was proven over a stress time of lh.