Evaluation of GaN HEMT Technology Development Through Nonlinear Characterization

This paper presents a comprehensive evaluation of GaN HEMT technology development on SiC substrates, relying on an electro-thermal model validated against DC, pulsed DC and S-parameter measurements. The measured devices are backside mounted, but the layout is also conceived for flip-chip mounting. Based on accurate estimation of the device thermal resistance, the model enables to explore and assess the device performances in both backside and flip-chip configurations; results are shown both for conventional ceramic AlN flip-chip mountings, and for advanced (diamond) heat sinks