Reverse noise measurement and use in device characterization

We review the concept of reverse noise measurements in the context of on-wafer transistor noise characterization. Several different applications of reverse noise measurements are suggested and demonstrated. Reverse measurements can be used to check measurement results, to significantly reduce the uncertainty in |/spl Gamma//sub opt/|, to reduce the occurrence of nonphysical results, and possibly to directly measure or constrain parameters in models of transistors.