An Alternative Process Architecture for CMOS Based High Side RESURF LDMOS Transistors

An alternative CMOS manufacturing process architecture for implementing power integrated circuits that may be used for applications requiring a bridge topology is presented. A RESURF N-LDMOS high-side compatible power transistor was designed onto the new process using TSuprem4 and Medici TCAD software. Masks were designed using Cadence Virtuoso and the new structure was manufactured at X-Fab UK Ltd. The physical results show good transistor characteristics compatible for high-side applications. The Specific RDSon for the new device is 260mOmegamm
²
and breakdown voltage for both high-side and low-side operation exceeds 100V