Spectral photoresponse of advanced interconnects: a possible solution to the ITRS most difficult characterization challenges

The spectral photoresponse of advanced interconnects is potentially interesting for the precise characterization of advanced interconnects, using standard comb test structures under illumination. This electro-optical method provides detailed information of the chemical composition of each layer of the dielectric stack via their bandgap. In addition, this non-destructive characterization is sensitive to internal strain, and is adapted to sub-32 nm generations