Wide Band Frequency Characterization of High Permittivity Dielectrics (High-K) for RF MIM Capacitors Integrated in BEOL

High permittivity insulators (high-k) are progressively introduced in high-speed integrated passives and devices in order to optimize circuit performances. However, high-k properties are expected to vary with frequency as relaxation and resonance mechanisms occur. It is necessary to analyze and evaluate high-k behaviour from DC to microwave frequency. Real permittivity (K or epsiv'
_r
) and losses (eepsiv"
_r
) extraction is required over a wide band of frequency to select the most suitable insulator. The proposed method enables the characterization of as deposited thin (down to 60 nm) planar dielectrics integrated below a copper coplanar wave-guide up to 40 GHz. Results of Ta
₂
O
₅
and STO insulators are presented in this paper