Pt-Germanide Schottky source/drain Germanium p-MOSFET with HfO/sub 2/ gate dielectric and TaN gate electrode

Schottky source/drain (S/D) transistors using Pt-germanide and HfO/sub 2//TaN gate stack are fabricated on Ge-substrate with conventional self-aligned top-gate process. It was found that Pt-germanide provides promising properties for p-MOSFET: negative effective hole barrier height, low resistivity, atomically sharp junction with Ge with good morphology. Pt-germanide Ge-p-MOSFETs showed well-behaved I/sub D/-V/sub D/ characteristics and much suppressed I/sub off/ compared to Ni-germanide and conventional heavily doped S/D MOSFETs.