A 100 W high-efficiency GaN HEMT amplifier for S-band wireless system

We have successfully developed a 100 W AlGaN/GaN power amplifier with a bandwidth of 300 MHz in S-band, operating at 50 V drain bias voltage. This amplifier consists of one HEMT die developed for L/S-band frequency operation and a single-ended package. The developed amplifier has an output power of 100 W and a high linear gain of more than 13.5 dB in the frequency range of 2.6 GHz to 2.9 GHz under CW or pulsed conditions [200 usec (pulse width) and 2 msec (period)]. High drain efficiency of 58% was also achieved at an output power of 100 W and frequency of 2.8 GHz. To the best of our knowledge this is the first report of 100 W AlGaN/GaN HEMT amplifier developed for S-band high power application.