High power/high bandwidth GaN MMICs and hybrid amplifiers: design and characterization

Broadband microstrip and coplanar MMIC amplifiers featuring beyond 10 W for X-band radar applications are realized in a AlGaN/GaN HEMT technology on 2" s.i. SiC substrate. Single-stage and dual-stage demonstrators with flat gain from 1 GHz to 2.7 GHz and up to 40 W peak power in hybrid microstrip technology for basestation applications are presented. The performance illustrates the potential of this technology with very high bandwidth and superior power density in comparison to GaAs.