Frequency response enhancement of a single strained layer SiGe phototransistor based on physical simulations

An original approach based on a physical model is used to evaluate opto-microwave performances of a vertically illuminated single strained layer SiGe HPT. Analysis of opto-microwave performance is presented at 940 nm. The contribution of each region on the dynamic performances is studied. Frequency response enhancement is shown for base optical detection first and also by wavelength analysis while maintaining whole component detection. Increases up to a 9.8 factor for the -3 dB-bandwidth (f/sub -3 dB/) in photodiode mode and of a 2.2 factor for the transition optical frequency (f/sub Topt/) in photo transistor mode are presented, reaching respectively 19.7 GHz and 15.3 GHz.