InA1As/InGaAs Metamorphic High Electron Mobility Transistor with a Liquid Phase Oxidized InA1As as Gate Dielectric

The In
0.52
AI
0.48
As/In
0.53
Ga
0.47
As metal-oxide-semiconductor metamorphic high electron mobility transistors (MOS-MHEMTs) with a thin InAlAs native oxide layer are demonstrated. After highly selective gate recessing of InGaAs/InAIAs using citric buffer etchant, the gate dielectric is obtained directly by oxidizing InAlAs layer in a liquid phase solution near room temperature. As compared to its counterpart MHEMT, the fabricated InAlAs/InGaAs MOS-MHEMT exhibits larger gate swing voltage, higher drain-to-source breakdown voltage, and at least 1000% improvement in gate leakage current with the effectively suppressed impact ionization effect.