Gate current in complementary HFETs

Gate current studies have been performed to optimize the performance of HFET (heterostructure field-effect transistor) circuits. Pseudomorphic Al/sub x/Ga/sub 1-x/As/In/sub y/Ga/sub 1-y/As n- and p-channel HFETs with x and y values up to 0.75 and 0.25, respectively, were studied. An analytical theory of the gate current in n- and p-channel HFETs, taking into account both thermionic emission and tunneling is presented.