MBE Growth of TlInGaAs/TlInP/InP SCH LDs and Their Laser Operation

TlInGaAs/TllnP/InP separate confinement heterostructures (SCHs) were grown by gas-source molecular-beam epitaxy and metal stripe laser diodes (LDs) were fabricated. Temperature variation of electroluminescence peak wavelength was as small as 0.06 nm/K due to the reduced temperature variation of band gap energy of TlInGaAs. Pulsed laser operation was achieved at 77 K - 297 K. Threshold current density for the TlInGaAs/TlInP/InP SCH LD (0.6 kA/cm
²
at 77 K) was smaller than that for the TlInGaAs/InP double heterostructure LD (0.8 kA/cm
²
at 77 K), which is due to the increased refractive index for TlInP and the improved optical confinement. Temperature variation of main peak wavelength in the lasing spectra was as small as 0.07 nm/K, which is much smaller than those for the InGaAsP/InP Fabry-Perot LDs (0.4 nm/K) and distributed feed-back LDs (0.1 nm/K)