/spl lambda/ = 1.3 /spl mu/m high density InGaAs/GaAs quantum dots grown by molecular beam epitaxy

In
_x
Ga
_1-x
As (x=0.5-0.75) QD's of high density of 1.3 times 10
¹¹
cm
^-2
and uniform size (diameter ~ 23-nm and height ~ 4-nm) were obtained by MBE. lambda = 1.3 mum emission was observed for In
_0.65
Ga
_0.35
As QD's capped with In
_0.1
Ga
_0.9
As