Highly-ordered and highly-stacked (150-layers) quantum dots

We review our successful growth of stacks of InAs quantum dots (QDs) on InP(311)B substrates using a novel strain-control technique and improved the size uniformity of the QDs by precisely controlling the composition of the strain-compensating spacer layers. In a stack of 150 InAs QD layers, the density of the QDs exceeds 5times10
¹²
/cm
²
which cannot be obtained using conventional techniques for fabricating QDs. In a sample of a 150-layer stack, the QDs show good size uniformity and an ordered structure. In addition, a strong 1.5 mum photoluminescence emission was observed from this sample at room temperature