Buried ridge stripe lasers using InAs/InP (100) quantum dashes based active layer: a step towards low noise sources for high-speed direct modulation

We investigate the devices performances of InAs/InP (100) quantum dash buried stripe ridge lasers. We demonstrate high-gain quantum dash based lasers whose dynamic properties are compatible with high-speed devices requirements. The good temperature characteristic of such lasers allows 10 Gb/s direct modulation in the temperature range of 25-75degC. The mode-beating RF spectrum of passively locked FP quantum dashes laser shows a very narrow spectral linewidth (50 kHz) attributed to a strong phase correlation between modes